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Model SI9926BDY
Description 双N沟道2.5 -V （G -S ）的MOSFET Dual N-Channel 2.5-V (G-S) MOSFET
Product QR code
Brand: Vishay Semiconductor
Packaging SO
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4020) Minimum order quantity(1)
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Technical parameters/rated power:

1.14 W

 

Technical parameters/drain source resistance:

20.0 mΩ

 

Technical parameters/polarity:

N-Channel, Dual N-Channel

 

Technical parameters/dissipated power:

1.14 W

 

Technical parameters/Leakage source breakdown voltage:

20.0 V

 

Technical parameters/breakdown voltage of gate source:

±12.0 V

 

Technical parameters/Continuous drain current (Ids):

6.20 A

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SO

 

Dimensions/Packaging:

SO

 

Compliant with standards/RoHS standards:

Non-Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI9926BDY-E3 SI9926BDY-E3 Vishay Siliconix 类似代替 SO-8
MOSFET NCh Dual MOSFET 2.5V
PDF
SI9926BDY-T1-GE3 SI9926BDY-T1-GE3 VISHAY 功能相似 SOIC
MOSFET 20V 8.2A 2W 20mohm @ 4.5V
SI9926BDY-T1-GE3 SI9926BDY-T1-GE3 Vishay Semiconductor 功能相似 SOIC
MOSFET 20V 8.2A 2W 20mohm @ 4.5V
PDF

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