Technical parameters/rated current: | 20.0 mA |
|
Technical parameters/breakdown voltage: | -25.0 V |
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Technical parameters/drain source resistance: | 35.0 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 500 mW |
|
Technical parameters/breakdown voltage of gate source: | -25.0 V |
|
Technical parameters/Continuous drain current (Ids): | 30.0 mA |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 500 mW |
|
Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-206 |
|
Dimensions/Height: | 3.81 mm |
|
Dimensions/Packaging: | TO-206 |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PMBFJ308
|
NXP | 功能相似 | SOT-23-3 |
N-channel silicon field-effect transistors
|
||
SST308
|
Vishay Semiconductor | 功能相似 | SOT-23 |
RF Small Signal Field-Effect Transistor, 1Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, SOT-23, 3Pin
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||
SST308
|
Calogic | 功能相似 | SOT-23 |
RF Small Signal Field-Effect Transistor, 1Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, SOT-23, 3Pin
|
||
SST309
|
Vishay Semiconductor | 功能相似 | SOT-23 |
RF Small Signal Field-Effect Transistor, 1Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, PLASTIC PACKAGE-3
|
||
SST309
|
VISHAY | 功能相似 | SOT-23 |
RF Small Signal Field-Effect Transistor, 1Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, PLASTIC PACKAGE-3
|
||
SST309
|
Micross | 功能相似 | SOT-23 |
RF Small Signal Field-Effect Transistor, 1Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, PLASTIC PACKAGE-3
|
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