Technical parameters/rated power: | 3 W |
|
Technical parameters/drain source resistance: | 13.0 mΩ |
|
Technical parameters/polarity: | P-Channel |
|
Technical parameters/dissipated power: | 3.00 W |
|
Technical parameters/breakdown voltage of gate source: | ±20.0 V |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SO |
|
Dimensions/Packaging: | SO |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET 40V 10.5A 3W
|
||
SI4401DY-T1-GE3
|
VISHAY | 功能相似 | SOP |
MOSFET 40V 10.5A 3W 15.5mohm @ 10V
|
||
SI4401DY-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET 40V 10.5A 3W 15.5mohm @ 10V
|
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