Technical parameters/polarity: | P-CH |
|
Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/Continuous drain current (Ids): | 4A |
|
Technical parameters/Input capacitance (Ciss): | 380pF @25V(Vds) |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 20000 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-39 |
|
Dimensions/Packaging: | TO-39 |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6845
|
Magnatec | 功能相似 | TO-39 |
SEMELAB 2N6845 晶体管, MOSFET, P沟道, 4 A, -100 V, 600 mohm, -10 V, -4 V
|
||
2N6845
|
Semelab | 功能相似 | TO-39 |
SEMELAB 2N6845 晶体管, MOSFET, P沟道, 4 A, -100 V, 600 mohm, -10 V, -4 V
|
||
2N6845
|
New Jersey Semiconductor | 功能相似 |
SEMELAB 2N6845 晶体管, MOSFET, P沟道, 4 A, -100 V, 600 mohm, -10 V, -4 V
|
|||
2N6845
|
International Rectifier | 功能相似 |
SEMELAB 2N6845 晶体管, MOSFET, P沟道, 4 A, -100 V, 600 mohm, -10 V, -4 V
|
|||
2N6845
|
TT Electronics | 功能相似 |
SEMELAB 2N6845 晶体管, MOSFET, P沟道, 4 A, -100 V, 600 mohm, -10 V, -4 V
|
|||
IRFF9120PBF
|
Infineon | 功能相似 | TO-39 |
TO-39P-CH 100V 4A
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review