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Technical parameters/polarity: P-CH
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 4A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6845
|
Magnatec | 功能相似 | TO-39 |
SEMELAB 2N6845 晶体管, MOSFET, P沟道, 4 A, -100 V, 600 mohm, -10 V, -4 V
|
||
2N6845
|
Semelab | 功能相似 | TO-39 |
SEMELAB 2N6845 晶体管, MOSFET, P沟道, 4 A, -100 V, 600 mohm, -10 V, -4 V
|
||
2N6845
|
New Jersey Semiconductor | 功能相似 |
SEMELAB 2N6845 晶体管, MOSFET, P沟道, 4 A, -100 V, 600 mohm, -10 V, -4 V
|
|||
2N6845
|
International Rectifier | 功能相似 |
SEMELAB 2N6845 晶体管, MOSFET, P沟道, 4 A, -100 V, 600 mohm, -10 V, -4 V
|
|||
|
2N6845
|
TT Electronics | 功能相似 |
SEMELAB 2N6845 晶体管, MOSFET, P沟道, 4 A, -100 V, 600 mohm, -10 V, -4 V
|
|||
|
IRFF9120
|
Intersil | 功能相似 |
4A ， 100V ， 0.60欧姆，P沟道功率MOSFET 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET
|
|||
JANTXV2N6845
|
International Rectifier | 功能相似 | TO-39 |
TO-39P-CH 100V 4A
|
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