Technical parameters/dissipated power: | 180 W |
|
Technical parameters/breakdown voltage (collector emitter): | 1.20 kV |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-3 |
|
Dimensions/Packaging: | TO-3 |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ON Semiconductor | 功能相似 | TO-263-3 |
600V ,开关电源II系列N沟道IGBT与反并联二极管StealthTM 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
|
||
SGH15N120RUFTU
|
Fairchild | 完全替代 | TO-3 |
Trans IGBT Chip N-CH 1200V 24A 180000mW 3Pin(3+Tab) TO-3P Rail
|
||
SGS23N60UFDTU
|
Fairchild | 功能相似 | TO-220-3 |
高速开关 High speed switching
|
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