Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 12.0 A
Technical parameters/dissipated power: 73 W
Technical parameters/breakdown voltage (collector emitter): 600 V
Technical parameters/reverse recovery time: 60 ns
Technical parameters/rated power (Max): 73 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 73000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.16 mm
External dimensions/width: 4.7 mm
External dimensions/height: 16.07 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SGH15N60RUFTU
|
ON Semiconductor | 类似代替 | TO-3 |
Trans IGBT Chip N-CH 600V 24A 3Pin(3+Tab) TO-3P Rail
|
||
SGS6N60UFTU
|
Fairchild | 类似代替 | TO-220-3 |
Trans IGBT Chip N-CH 600V 6A 22000mW 3Pin(3+Tab) TO-220F Rail
|
||
SGS6N60UFTU
|
ON Semiconductor | 类似代替 | TO-220-3 |
Trans IGBT Chip N-CH 600V 6A 22000mW 3Pin(3+Tab) TO-220F Rail
|
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