Technical parameters/drain source resistance: | 6 mΩ |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 2.5 W |
|
Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/Continuous drain current (Ids): | 24.0 A |
|
Technical parameters/rise time: | 20 ns |
|
Technical parameters/Input capacitance (Ciss): | 1700pF @15V(Vds) |
|
Technical parameters/rated power (Max): | 6 W |
|
Technical parameters/descent time: | 15 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 2500 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Packaging: | SOIC-8 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Minimum Packaging: | 2500 |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS6676AS
|
ON Semiconductor | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS6676AS 晶体管, MOSFET, N沟道+肖特基, 14.5 A, 30 V, 0.0045 ohm, 10 V, 1.5 V
|
||
IRF8113PBF
|
Infineon | 功能相似 | SOIC-8 |
INFINEON IRF8113PBF 晶体管, MOSFET, N沟道, 17.2 A, 30 V, 5.6 mohm, 10 V, 2.2 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review