Technical parameters/drain source resistance: | 36.0 mΩ |
|
Technical parameters/polarity: | N-Channel, P-Channel |
|
Technical parameters/dissipated power: | 1.10 W |
|
Technical parameters/breakdown voltage of gate source: | ±20.0 V |
|
Technical parameters/Continuous drain current (Ids): | 5.90 A |
|
Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SO |
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Dimensions/Packaging: | SO |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4384DY-T1-E3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
MOSFET N-CH 30V 10A 8-SOIC
|
||
SI4532CDY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
VISHAY SILICONIX SI4532CDY-T1-GE3 场效应管, MOSFET, NP-通道, 30V, 6/-4.3A, SOIC-8
|
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