Chinese power semiconductor firm East Micro Semi has announced a convertible bond offering of up to RMB 1.436 billion, with RMB 548 million allocated to its core project: next-generation wide-bandgap device industrialization, covering SiC, GaN, and early-stage gallium oxide (fourth-gen) R&D.
The new project, based at the company’s own Suzhou facility, will also expand silicon-based power lines and add advanced packaging capacity – directly targeting the supply gap in high-voltage, high-frequency power chips for AI data centers, EVs, energy storage, and industrial power supplies.
With traditional silicon nearing physical limits, gallium oxide stands out for its high breakdown field, making it a candidate for next-gen high-voltage electronics. Upon completion, East Micro aims to offer a full portfolio from low-voltage fast-charging to high-voltage grid applications, reducing reliance on imported wide-bandgap components.
Remaining funds go toward a new power management IC line and an R&D center to support ongoing innovation in driver chips and integrated power solutions. The move positions the company to capture domestic substitution momentum in wide-bandgap semiconductors, leveraging Suzhou’s mature local supply chain.
From ICgoodFind: GaN, SiC, and Ga₂O₃ – East Micro is playing the full spectrum. The real edge isn't just fab capacity; it's who qualifies first with hyperscalers.
