ASML CEO Christophe Fouquet has announced that the company’s next-generation High-NA Extreme Ultraviolet (EUV) lithography systems are expected to enter mass production for advanced chipmaking between 2027 and 2028. This timeline directly sets the pace for the commercial rollout of chips at the 2-nanometer node and beyond, marking a pivotal milestone for the global semiconductor industry.
The High-NA EUV system is a core piece of equipment for overcoming current performance limits. Compared to current EUV tools, its higher numerical aperture enables the printing of smaller features in a single exposure. This reduces process complexity, improves yield, and lowers costs for cutting-edge logic technologies. ASML and research partner imec have already validated the technology’s feasibility.
Intel is the most aggressive in adopting this new patterning technology. It is using the High-NA EUV system to develop its Intel 14A node, which is undergoing intensive testing and is planned for launch in 2027. Early feedback suggests it outperforms the previous 18A node in performance and yield at equivalent maturity levels. The tool's imaging quality and resolution are reportedly meeting expectations.
Fouquet stated that a core task for 2026 is to work closely with customers to minimize downtime for the High-NA systems, which is crucial for their transition to new production nodes. He also confirmed that ASML has begun R&D for the subsequent generation, Hyper-NA EUV, targeting readiness for the 2030s.
ICgoodFind's Insight
ASML's formal timeline for High-NA EUV mass production removes a major uncertainty for the industry's long-term roadmap. It signals the impending start of the true "Angstrom era" and will trigger a wave of advanced R&D and capital investment across the global semiconductor supply chain.
