Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1.2kV 90A 3Pin(3+Tab) TO-247AC Tube684010+$7.3944100+$7.0247500+$6.77821000+$6.76592000+$6.71665000+$6.65507500+$6.605710000+$6.5810 -
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Category: IGBTtransistorDescription: Co-Pack IGBT Beyond 21A, Infineon's isolated gate bipolar transistors (IGBTs) provide users with a complete range of options to ensure coverage of your applications. The high-efficiency rating makes this series of IGBTs suitable for various applications, and due to its low switching losses, it can support various switching frequencies. IGBT with combination package fast soft recovery parallel diode, used for bridge configuration # # IGBT transistors. International Rectifier provides a comprehensive IGBT (Insulated Gate Bipolar Transistor) product portfolio, ranging from 300V to 1200V, using various technologies to minimize switching and conduction losses, thereby improving efficiency, reducing thermal sensitivity issues, and improving power density. The company also offers a variety of IGBT compression molds specifically designed for medium to high power modules. For modules that require maximum reliability, a solderable front metal (SFM) die can be used to eliminate connecting wires, thereby achieving double-sided cooling, improving thermal performance, reliability, and efficiency.87811+$88.876610+$85.0124100+$84.3168250+$83.7759500+$82.92571000+$82.53932500+$81.99835000+$81.5346 -
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Category: IGBTtransistorDescription: Single IGBT exceeding 21A, Infineon optimized IGBT design for mid frequency applications, with fast response and maximum efficiency for users. By utilizing optimized FRED diodes, optimal performance can be achieved with IGBT # # IGBT transistors. International Rectifiers offer a comprehensive portfolio of IGBT (Insulated Gate Bipolar Transistor) products ranging from 300V to 1200V, utilizing various technologies to minimize switching and conduction losses, thereby improving efficiency, reducing thermal sensitivity issues, and enhancing power density. The company also offers a variety of IGBT compression molds specifically designed for medium to high power modules. For modules that require maximum reliability, a solderable front metal (SFM) die can be used to eliminate connecting wires, thereby achieving double-sided cooling, improving thermal performance, reliability, and efficiency.41041+$38.700810+$36.4803100+$34.8308250+$34.5770500+$34.32321000+$34.03772500+$33.78395000+$33.6253 -
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Category: IGBTtransistorDescription: MOD IGBT 1200V 15A 6PK EZIRPACK114011+$299.443910+$291.632350+$285.6434100+$283.5604200+$281.9980500+$279.91501000+$278.61302000+$277.3111 -
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Category: IGBTtransistorDescription: MOD IGBT 1200V 200A POWIR 6238381+$930.016610+$897.384450+$893.3054100+$889.2264150+$882.6999250+$876.9893500+$871.27871000+$864.7522 -
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Category: IGBTtransistorDescription: Co-Pack IGBT Beyond 21A, Infineon's isolated gate bipolar transistors (IGBTs) provide users with a complete range of options to ensure coverage of your applications. The high-efficiency rating makes this series of IGBTs suitable for various applications, and due to its low switching losses, it can support various switching frequencies. IGBT with combination package fast soft recovery parallel diode, used for bridge configuration # # IGBT transistors. International Rectifier provides a comprehensive IGBT (Insulated Gate Bipolar Transistor) product portfolio, ranging from 300V to 1200V, using various technologies to minimize switching and conduction losses, thereby improving efficiency, reducing thermal sensitivity issues, and improving power density. The company also offers a variety of IGBT compression molds specifically designed for medium to high power modules. For modules that require maximum reliability, a solderable front metal (SFM) die can be used to eliminate connecting wires, thereby achieving double-sided cooling, improving thermal performance, reliability, and efficiency.45241+$94.746210+$90.6268100+$89.8853250+$89.3086500+$88.40231000+$87.99042500+$87.41375000+$86.9193 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1.2kV 100A 3Pin(3+Tab) TO-247AC Tube86101+$56.849610+$53.5877100+$51.1646250+$50.7918500+$50.41901000+$49.99972500+$49.62695000+$49.3939 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1.2kV 130A 3Pin(3+Tab) TO-247AC Tube887110+$8.7504100+$8.3129500+$8.02121000+$8.00662000+$7.94835000+$7.87547500+$7.817010000+$7.7879 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1200V 30A 125000mW 3Pin(3+Tab) TO-247AD Tube94905+$25.596150+$24.5022200+$23.8897500+$23.73651000+$23.58342500+$23.40845000+$23.29907500+$23.1896 -
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Category: IGBTtransistorDescription: Transistor: IGBT; 1200V; 70A; 320W; TO247AC84011+$57.027710+$53.7556100+$51.3249250+$50.9510500+$50.57701000+$50.15632500+$49.78245000+$49.5486 -
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Category: IGBTtransistorDescription: INTERNATIONAL RECTIFIER IRG7PSH73K10PBF IGBT Single Transistor, 220A, 2V, 1.15kW, 1.2kV, TO-274AA, 3Pins543610+$8.7504100+$8.3129500+$8.02121000+$8.00662000+$7.94835000+$7.87547500+$7.817010000+$7.7879 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1200V 70A 320000mW 3Pin(3+Tab) TO-247AD Tube37571+$56.048010+$52.8322100+$50.4432250+$50.0757500+$49.70821000+$49.29472500+$48.92725000+$48.6975 -
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Category: IGBTtransistorDescription: INFINEON IRG7PH42UPBF. Transistor, IGBT, 385W33161+$49.286810+$46.4589100+$44.3581250+$44.0349500+$43.71171000+$43.34812500+$43.02495000+$42.8229 -
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Category: IGBTtransistorDescription: MOD IGBT 1200V 150A POWIR 6257881+$845.903910+$816.223150+$812.5130100+$808.8029150+$802.8667250+$797.6726500+$792.47841000+$786.5423 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1200V 116A 462000mW 3Pin(3+Tab) Super-247 Tube65751+$59.154110+$55.7601100+$53.2387250+$52.8508500+$52.46291000+$52.02662500+$51.63875000+$51.3962 -
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Category: IGBTtransistorDescription: MOD IGBT 1200V 300A POWIR 6219741+$1129.250910+$1089.628150+$1084.6752100+$1079.7224150+$1071.7978250+$1064.8638500+$1057.92981000+$1050.0053 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1.2kV 70A 3Pin(3+Tab) TO-247AD Tube46451+$38.877710+$36.6471100+$34.9900250+$34.7350500+$34.48011000+$34.19332500+$33.93845000+$33.7790 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1.2kV 90A 3Pin(3+Tab) TO-247AD Tube87581+$54.803610+$51.6592100+$49.3233250+$48.9639500+$48.60451000+$48.20022500+$47.84095000+$47.6163 -
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Category: IGBTtransistorDescription: PChannel-12 V 1.3 W 10 nC power Mosfet surface mount - MICRO-3377510+$6.0120100+$5.7114500+$5.51101000+$5.50102000+$5.46095000+$5.41087500+$5.370710000+$5.3507 -
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Category: IGBTtransistorDescription: IGBT 1200V 120A 520W TO274AA37251+$68.178910+$65.2146100+$64.6810250+$64.2660500+$63.61391000+$63.31742500+$62.90245000+$62.5467 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1200V 45A 216000mW 3Pin(3+Tab) TO-247AC Tube85231+$39.501210+$37.2347100+$35.5510250+$35.2920500+$35.03301000+$34.74162500+$34.48265000+$34.3207 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1.2kV 108A 3Pin(3+Tab) TO-247AC Tube29591+$58.778810+$56.2232100+$55.7632250+$55.4054500+$54.84321000+$54.58762500+$54.22985000+$53.9232 -
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Category: IGBTtransistorDescription: MOD IGBT 1200V 150A POWIR 6222161+$944.015810+$910.892450+$906.7520100+$902.6116150+$895.9869250+$890.1903500+$884.39371000+$877.7690 -
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Category: IGBTtransistorDescription: Co-Pack IGBT Beyond 21A, Infineon's isolated gate bipolar transistors (IGBTs) provide users with a complete range of options to ensure coverage of your applications. The high-efficiency rating makes this series of IGBTs suitable for various applications, and due to its low switching losses, it can support various switching frequencies. IGBT with combination package fast soft recovery parallel diode, used for bridge configuration # # IGBT transistors. International Rectifier provides a comprehensive IGBT (Insulated Gate Bipolar Transistor) product portfolio, ranging from 300V to 1200V, using various technologies to minimize switching and conduction losses, thereby improving efficiency, reducing thermal sensitivity issues, and improving power density. The company also offers a variety of IGBT compression molds specifically designed for medium to high power modules. For modules that require maximum reliability, a solderable front metal (SFM) die can be used to eliminate connecting wires, thereby achieving double-sided cooling, improving thermal performance, reliability, and efficiency.97955+$22.020650+$21.0795200+$20.5525500+$20.42081000+$20.28902500+$20.13855000+$20.04447500+$19.9503 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 330V 28A 3Pin(3+Tab) TO-220AB Full-Pak51855+$30.058550+$28.7739200+$28.0546500+$27.87471000+$27.69492500+$27.48945000+$27.36097500+$27.2325 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1.2kV 45A 3Pin(3+Tab) TO-247AC Tube13805+$31.909450+$30.5458200+$29.7821500+$29.59121000+$29.40032500+$29.18215000+$29.04577500+$28.9094 -
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Category: IGBTtransistorDescription: 600V Fast 1-5kHz Hard Switching Copack IGBT in a TO-220AB package >20kHz resonant mode7994
