Technical parameters/rated power: 38 W
Technical parameters/dissipated power: 38000 mW
Technical parameters/breakdown voltage (collector emitter): 600 V
Technical parameters/reverse recovery time: 28 ns
Technical parameters/rated power (Max): 38 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 38000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.39 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Last Time Buy
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRG4RC10KDPBF
|
Infineon | 完全替代 | TO-252-3 |
Trans IGBT Chip N-CH 600V 9A 38000mW 3Pin(2+Tab) DPAK
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review