Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: transistorDescription: NPN Transistors, NXP series of NXP BISS (small signal breakthrough) low saturation voltage NPN bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, NXP Semiconductors8485 -
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Category: transistorDescription: NXP PBSS4580PA Single transistor bipolar, NPN, 80 V, 155 MHz, 2.1 W, 5.6 A, 425 hFE2013 -
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Category: transistorDescription: NPN / NPNBreakthrough small signal (BISS) transistors with dual low VCEsat are packaged in plastic for medium power surface mount devices (SMD). NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.9375 -
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Category: transistorDescription: 20 V ，2 A NPNLow VCEsat (BISS) transistor 20V, 2A NPN low VCEsat (BISS) transistor1344 -
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Category: transistorDescription: BISS TRANSISTOR, NPN, 40V, 1A, 6-SOT-666; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transiti...4247 -
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Category: transistorDescription: 15 V ， 0.5 A PNPLow VCEsat (BISS) transistor 15V, 0.5A PNP low VCEsat (BISS) transistor4488 -
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Category: transistorDescription: NPN 800Milliampere, 40 V BISS renewable energy technology; R1=2.2 kiloohms, R2=2.2 kiloohms NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ7953 -
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Category: transistorDescription: PBHV9115TLH - 150V, 1A PNP high-voltage low VCEsat BISS transistor9054 -
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Category: transistorDescription: PNP 800Milliampere, 40 V BISS RET; R 1=2.2 kW, R 2=2.2 kW PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 2.2 kW4940 -
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Category: transistorDescription: Biss Loadswitch, Pnp Biss & Npn Ret, -15V, -500mA, 4.7KΩ, 6-Sot-6661114
