Technical parameters/dissipated power: | 400 mW |
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Technical parameters/Leakage source breakdown voltage: | 10 V |
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Technical parameters/breakdown voltage of gate source: | 20 V |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-46-3 |
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Dimensions/Packaging: | TO-46-3 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
New Jersey Semiconductor | 功能相似 |
JFET JFET N-Channel -20V 50mA 400mW 2.3mW
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InterFET | 功能相似 | TO-46-3 |
JFET JFET N-Channel -20V 50mA 400mW 2.3mW
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