Technical parameters/drain source resistance: | 290 mΩ |
|
Technical parameters/polarity: | P-Channel |
|
Technical parameters/dissipated power: | 340 mW |
|
Technical parameters/breakdown voltage of gate source: | ±8.00 V |
|
Technical parameters/Continuous drain current (Ids): | -910 mA to 910 mA |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-323 |
|
Dimensions/Packaging: | SOT-323 |
|
Other/Product Lifecycle: | Obsolete |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1307DL-T1-E3
|
Vishay Siliconix | 功能相似 | SC-70-3 |
MOSFET, Power; P-Ch; VDSS -12V; RDS(ON) 0.24Ω; ID +/-0.85A; SC-70 (SOT-323); PD 0.29
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review