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Encapsulation parameters/Encapsulation: | SOT-363 |
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Dimensions/Packaging: | SOT-363 |
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Other/collector base reverse breakdown voltage V (BR) CBO Collector Base Voltage (VCBO): | 50V |
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Other/Collector emitter reverse breakdown voltage V (BR) CEO Collector Emiter Voltage (VCEO): | 50V |
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Other/collector continuous output current IC Collector Current (IC): | 30mA |
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Other/Q1 Base Input Resistance R1 Input Resistance (R1): | 47KΩ/Ohm |
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Other/Q1 Base emitter input resistance R2 Base emitter Resistance (R2): | 47KΩ/Ohm |
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Other/Q1 Resistance Ratio (R1/R2) Q1 Resistance Ratio: | 1 |
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Other/Q2 Base Input Resistance R1 Input Resistance (R1): | 47KΩ/Ohm |
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Other/Q2 Base emitter input resistance R2 Base emitter Resistance (R2): | 47KΩ/Ohm |
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Other/Q2 Resistance Ratio (R1/R2) Q2 Resistance Ratio: | 1 |
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Other/Cut off Frequency fT Transition Frequency (fT): | 250MHz |
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Other/dissipated power Pc Power Dissipation: | 150mW/0.15W |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
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UMH2NTN
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ROHM Semiconductor | 功能相似 | SC-70-5 |
NPN 晶体管，ROHM ### Digital Transistors, ROHM Resistor-equipped bipolar transistors, also known as Digital Transistors or Bias Resistor Transistors, incorporating one or two integrated resistors. A single series input resistor, or a potential divider of two resistors, allows these devices to be directly driven from digital sources. Both single and dual transistor versions are available.
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ROHM Semiconductor | 功能相似 | UMT |
UMT NPN 50V 100mA
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