Technical parameters/rated voltage (DC): | 1.00 kV |
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Technical parameters/rated current: | 19.0 A |
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Technical parameters/polarity: | N-CH |
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Technical parameters/Input capacitance: | 7.90 nF |
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Technical parameters/gate charge: | 500 nC |
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Technical parameters/drain source voltage (Vds): | 1.00 kV |
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Technical parameters/Continuous drain current (Ids): | 19.0 A |
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Technical parameters/rise time: | 13 ns |
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Technical parameters/Input capacitance (Ciss): | 6600pF @25V(Vds) |
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Technical parameters/descent time: | 8 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 450000 mW |
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Encapsulation parameters/installation method: | Screw |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | SOT-227 |
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Dimensions/Packaging: | SOT-227 |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
APT10045JFLL
|
Advanced Power Technology | 类似代替 |
MOSFET N-CH 1000V 21A SOT-227
|
|||
APT10045JLL
|
Advanced Power Technology | 类似代替 |
Trans MOSFET N-CH 1kV 21A 4Pin SOT-227
|
|||
APT10050JN
|
Microsemi | 类似代替 | SOT-227 |
SOT-227 N-CH 1000V 20.5A
|
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