Technical parameters/rated voltage (DC): | -100 V |
|
Technical parameters/rated current: | -12.0 A |
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Technical parameters/drain source resistance: | 300 mΩ |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 75.0 W |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Leakage source breakdown voltage: | 100 V |
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Technical parameters/breakdown voltage of gate source: | ±20.0 V |
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Technical parameters/Continuous drain current (Ids): | 12.0 A |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220 |
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Dimensions/Packaging: | TO-220 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MTP12P10
|
ON Semiconductor | 功能相似 | TO-220 |
12A, 100V, 0.3Ω, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
||
|
|
Rochester | 功能相似 | CASE 221A-09 |
-12A,-100V,P沟道功率MOSFET
|
||
RFP12P10
|
Intersil | 功能相似 |
12A , 80V和100V , 0.300欧姆,P沟道功率MOSFET 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs
|
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