Chip AI consultant
Technical parameters/rated voltage (DC): | 600 V |
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Technical parameters/rated current: | 40.0 A |
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Technical parameters/output current: | ≤40.0 A |
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Technical parameters/forward voltage: | 700 mV |
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Technical parameters/polarity: | Standard |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-5 |
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Dimensions/Packaging: | DO-5 |
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Physical parameters/operating temperature: | -65℃ ~ 190℃ |
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Other/Product Lifecycle: | Unknown |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
NJS | 功能相似 | 2 |
电源硅整流二极管， 35 A / 40 A / 60 A Power Silicon Rectifier Diodes, 35 A/40 A/60 A
|
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|
|
Microchip | 功能相似 | DO-203AB-2 |
电源硅整流二极管， 35 A / 40 A / 60 A Power Silicon Rectifier Diodes, 35 A/40 A/60 A
|
||
1N1190A
|
Vishay Precision Group | 功能相似 | DO-203AB |
电源硅整流二极管， 35 A / 40 A / 60 A Power Silicon Rectifier Diodes, 35 A/40 A/60 A
|
||
1N1190A
|
GeneSiC Semiconductor | 功能相似 | DO-203AB |
电源硅整流二极管， 35 A / 40 A / 60 A Power Silicon Rectifier Diodes, 35 A/40 A/60 A
|
||
1N1190A
|
VISHAY | 功能相似 | DO-5 |
电源硅整流二极管， 35 A / 40 A / 60 A Power Silicon Rectifier Diodes, 35 A/40 A/60 A
|
||
|
|
Microsemi | 功能相似 | DO-5 |
电源硅整流二极管， 35 A / 40 A / 60 A Power Silicon Rectifier Diodes, 35 A/40 A/60 A
|
||
JANTX1N1190
|
Microsemi | 功能相似 | DO-5 |
军事硅电力整流器 Military Silicon Power Rectifier
|
||
NTE5994
|
NTE Electronics | 功能相似 |
Diode 600V 40A 2Pin DO-5
|
|||
|
|
Microsemi | 功能相似 | DO-5 |
广颖电整流器 SILICON POWER RECTIFIER
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