Technical parameters/polarity: | N-CH |
|
Technical parameters/drain source voltage (Vds): | 60 V |
|
Technical parameters/Continuous drain current (Ids): | 40A |
|
Encapsulation parameters/Encapsulation: | LDPAK(S)-1 |
|
Dimensions/Packaging: | LDPAK(S)-1 |
|
Other/Product Lifecycle: | Unknown |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK2912S
|
Renesas Electronics | 功能相似 |
硅N沟道MOS FET高速电源开关 Silicon N Channel MOS FET High Speed Power Switching
|
|||
2SK2912S
|
HITACHI | 功能相似 | TO-252 |
硅N沟道MOS FET高速电源开关 Silicon N Channel MOS FET High Speed Power Switching
|
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