Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOT-89 |
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Dimensions/Packaging: | SOT-89 |
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Other/collector base reverse breakdown voltage V (BR) CBOCollector Base Voltage (VCBO): | 40V |
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Other/collector emitter reverse breakdown voltage V (BR) CEOCluster Emiter Voltage (VCEO): | 20V |
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Other/collector continuous output current ICCollector Current (IC): | 2A |
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Other/Cut off Frequency fTTransmission Frequency (fT): | 200MHz |
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Other/DC current gain hFEDC Current Gain (hFE): | 200~400 |
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Other/Tube Pressure Drop VCE (sat) Collector Hermit Saturation Voltage: | 300mV/0.3V |
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Other/dissipated power PcPower Dissipation: | 2W |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Infineon | 功能相似 | SOT-223 |
1A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC, SO-4
|
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BCP55-10
|
Philips | 功能相似 | SOT-223 |
1A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC, SO-4
|
||
|
|
Fairchild | 功能相似 | DPAK |
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
|
||
|
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Samsung | 功能相似 | 2 |
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
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