Technical parameters/frequency: | 100 MHz |
|
Technical parameters/polarity: | PNP |
|
Technical parameters/dissipated power: | 0.25 W |
|
Technical parameters/breakdown voltage (collector emitter): | 30 V |
|
Technical parameters/Maximum allowable collector current: | 0.1A |
|
Technical parameters/minimum current amplification factor (hFE): | 220 @2mA, 5V |
|
Technical parameters/maximum current amplification factor (hFE): | 220 @2mA, 5V |
|
Technical parameters/rated power (Max): | 250 mW |
|
Technical parameters/dissipated power (Max): | 250 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Packaging: | SOT-23-3 |
|
Physical parameters/operating temperature: | -65℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC858BLT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC858BLT1G 单晶体管 双极, 通用, PNP, 30 V, 100 MHz, 225 mW, 100 mA, 100 hFE
|
||
|
|
Philips | 类似代替 | TO-236 |
PNP 晶体管,NXP ### 双极性晶体管,NXP Semiconductors
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review