Technical parameters/frequency: | 30 MHz |
|
Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 70 W |
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Technical parameters/output power: | 25.0 W |
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Technical parameters/breakdown voltage (collector emitter): | 35 V |
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Technical parameters/gain: | 25 dB |
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Technical parameters/minimum current amplification factor (hFE): | 10 @1A, 5V |
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Technical parameters/rated power (Max): | 25 W |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | 211-07 |
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Dimensions/Packaging: | 211-07 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tray |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with standards/ELV standards: | Compliant |
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Customs information/ECCN code: | EAR99 |
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Customs Information/Hong Kong Import and Export License: | NLR |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MRF426
|
M/A-Com | 功能相似 | 211-07 |
射频线NPN硅功率晶体管25W ( PEP ) ,在30MHz , 28V The RF Line NPN Silicon Power Transistor 25W(PEP), 30MHz, 28V
|
||
MRF426
|
Motorola | 功能相似 |
射频线NPN硅功率晶体管25W ( PEP ) ,在30MHz , 28V The RF Line NPN Silicon Power Transistor 25W(PEP), 30MHz, 28V
|
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