Chip AI consultant
Technical parameters/rated voltage (DC): | 800 V |
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Technical parameters/rated current: | 6.00 A |
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Technical parameters/number of channels: | 1 |
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Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 0.78 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 39 W |
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Technical parameters/threshold voltage: | 3 V |
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Technical parameters/drain source voltage (Vds): | 800 V |
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Technical parameters/Leakage source breakdown voltage: | 800 V |
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Technical parameters/Continuous drain current (Ids): | 6.00 A |
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Technical parameters/rise time: | 15 ns |
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Technical parameters/Input capacitance (Ciss): | 785pF @100V(Vds) |
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Technical parameters/descent time: | 8 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 39 W |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Length: | 10.65 mm |
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Dimensions/Width: | 4.85 mm |
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Dimensions/Height: | 16.15 mm |
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Dimensions/Packaging: | TO-220-3 |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tube |
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Other/Manufacturing Applications: | Alternative Energy, Industrial, Alternative Energy, Power Management, Consumer Electronics, Consumer Electronics, Industrial, Power Management |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with sta Alternative material
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