Technical parameters/dissipated power: | 115 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 3.3 V |
|
Technical parameters/gain: | 18 dB |
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Technical parameters/minimum current amplification factor (hFE): | 50 @5mA, 2V |
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Technical parameters/rated power (Max): | 115 mW |
|
Technical parameters/dissipated power (Max): | 115 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | SOT-343 |
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Dimensions/Packaging: | SOT-343 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Renesas Electronics | 功能相似 | Mini-Mold |
Trans RF BJT NPN 3.3V 0.035A 4Pin Case M04 T/R
|
||
NE662M04-T2-A
|
California Eastern Laboratories | 功能相似 | MiniMold-Flat-4 |
Trans RF BJT NPN 3.3V 0.035A 4Pin Case M04 T/R
|
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