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Model NSBC114YPDP6T5G

Description Complementary Bias Resistance Transistors

Brand: ON Semiconductor

Packaging SOT-963-6

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

20+:

$ 0.4320

50+:

$ 0.4000

100+:

$ 0.3840

300+:

$ 0.3712

500+:

$ 0.3616

1000+:

$ 0.3552

5000+:

$ 0.3488

10000+:

$ 0.3424

Price	$ 0.4320	$ 0.4000	$ 0.3840	$ 0.3712	$ 0.3616
Start batch production	20+	50+	100+	300+	500+

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Technical parameters/number of channels:	2
Technical parameters/polarity:	NPN+PNP
Technical parameters/dissipated power:	0.408 W
Technical parameters/breakdown voltage (collector emitter):	50 V
Technical parameters/Maximum allowable collector current:	100mA
Technical parameters/minimum current amplification factor (hFE):	80 @5mA, 10V
Technical parameters/maximum current amplification factor (hFE):	80
Technical parameters/rated power (Max):	339 mW
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	408 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	6
Encapsulation parameters/Encapsulation:	SOT-963-6
Dimensions/Length:	1 mm
Dimensions/Width:	0.8 mm
Dimensions/Height:	0.37 mm
Dimensions/Packaging:	SOT-963-6
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with standard/REACH SVHC version:	2015/12/17
Customs information/ECCN code:	EAR99

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