Chip AI consultant
Technical parameters/frequency: | 12000 MHz |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 0.125 W |
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Technical parameters/breakdown voltage (collector emitter): | 6 V |
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Technical parameters/gain: | 11 dB |
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Technical parameters/minimum current amplification factor (hFE): | 75 @10mA, 3V |
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Technical parameters/rated power (Max): | 125 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 125 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-523 |
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Dimensions/Packaging: | SOT-523 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SC5010
|
Renesas Electronics | 功能相似 |
NPN硅外延晶体管3引脚超超MINI模具 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
|
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|
Silicon Strorage Technology | 完全替代 | SOT-343 |
Trans RF BJT NPN 6V 0.03A 3Pin Ultra Super Mini-Mold
|
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Renesas Electronics | 完全替代 | Surface Mount |
Trans RF BJT NPN 6V 0.03A 3Pin Ultra Super Mini-Mold
|
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NE68519-T1
|
California Eastern Laboratories | 类似代替 | SOT-523 |
Trans RF BJT NPN 6V 0.03A 3Pin Ultra Super Mini-Mold T/R
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NEC | 类似代替 | Surface Mount |
Trans RF BJT NPN 6V 0.03A 3Pin Ultra Super Mini-Mold T/R
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