Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-126 |
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Dimensions/Packaging: | TO-126 |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Inchange Semiconductor | 功能相似 |
STMICROELECTRONICS BD438. 单晶体管 双极, PNP, 45 V, 36 W, 4 A, 30 hFE
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Motorola | 功能相似 |
STMICROELECTRONICS BD438. 单晶体管 双极, PNP, 45 V, 36 W, 4 A, 30 hFE
|
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BD438
|
CDIL | 功能相似 |
STMICROELECTRONICS BD438. 单晶体管 双极, PNP, 45 V, 36 W, 4 A, 30 hFE
|
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Comset Semiconductors | 功能相似 |
STMICROELECTRONICS BD438. 单晶体管 双极, PNP, 45 V, 36 W, 4 A, 30 hFE
|
|||
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CJ | 功能相似 | TO-126 |
STMICROELECTRONICS BD438. 单晶体管 双极, PNP, 45 V, 36 W, 4 A, 30 hFE
|
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BD438
|
ST Microelectronics | 功能相似 | TO-126-3 |
STMICROELECTRONICS BD438. 单晶体管 双极, PNP, 45 V, 36 W, 4 A, 30 hFE
|
||
BD438
|
Solid State | 功能相似 | TO-126 |
STMICROELECTRONICS BD438. 单晶体管 双极, PNP, 45 V, 36 W, 4 A, 30 hFE
|
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BD438
|
Siemens AG | 功能相似 |
STMICROELECTRONICS BD438. 单晶体管 双极, PNP, 45 V, 36 W, 4 A, 30 hFE
|
|||
BD438STU
|
ON Semiconductor | 类似代替 | TO-126-3 |
Power PNP 晶体管,Fairchild Semiconductor ### 双极晶体管,Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案,用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
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BD438STU
|
Fairchild | 类似代替 | TO-126-3 |
Power PNP 晶体管,Fairchild Semiconductor ### 双极晶体管,Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案,用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
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