Chip AI consultant
Technical parameters/forward voltage: | 1.3 V |
|
Technical parameters/dissipated power: | 250 mW |
|
Technical parameters/output voltage (Max): | 420 VAC |
|
Technical parameters/forward voltage (Max): | 1.5 V |
|
Technical parameters/forward current (Max): | 60 mA |
|
Technical parameters/operating temperature (Max): | 85 ℃ |
|
Technical parameters/operating temperature (Min): | -40 ℃ |
|
Technical parameters/dissipated power (Max): | 250 mW |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | DIP |
|
Dimensions/Packaging: | DIP |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MOC3162M
|
ON Semiconductor | 完全替代 | PDIP-6 |
该MOC306XM和MOC316XM装置由一个GaAs中的红外发光二极管光耦合到执行零电压穿越双边双向可控硅驱动器的功能的单片硅检测器。 The MOC306XM and MOC316XM devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver.
|
||
MOC3162M
|
Fairchild | 完全替代 | PDIP-6 |
该MOC306XM和MOC316XM装置由一个GaAs中的红外发光二极管光耦合到执行零电压穿越双边双向可控硅驱动器的功能的单片硅检测器。 The MOC306XM and MOC316XM devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver.
|
||
MOC3162TVM
|
ON Semiconductor | 完全替代 | DIP |
6引脚DIP零交叉光三驱动光电耦合器（ 600V PEAK ） 6-PIN DIP ZERO-CROSS PHOTOTRIAC DRIVER OPTOCOUPLER (600V PEAK)
|
||
MOC3162TVM
|
Fairchild | 完全替代 | DIP-6 |
6引脚DIP零交叉光三驱动光电耦合器（ 600V PEAK ） 6-PIN DIP ZERO-CROSS PHOTOTRIAC DRIVER OPTOCOUPLER (600V PEAK)
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review