Chip AI consultant
Technical parameters/rated voltage (DC): | 55.0 V |
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Technical parameters/rated current: | 104 A |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 200 W |
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Technical parameters/product series: | IRL2505 |
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Technical parameters/drain source voltage (Vds): | 55.0 V |
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Technical parameters/Leakage source breakdown voltage: | 55.0 V |
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Technical parameters/Continuous drain current (Ids): | 104 A |
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Technical parameters/rise time: | 160 ns |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220 |
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Dimensions/Packaging: | TO-220 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRL2505PBF
|
International Rectifier | 功能相似 | TO-220-3 |
N 通道功率 MOSFET 超过 100A，Infineon ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
|
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IRL2505PBF
|
Infineon | 功能相似 | TO-220-3 |
N 通道功率 MOSFET 超过 100A，Infineon ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
|
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IRL2505PBF
|
IRF | 功能相似 |
N 通道功率 MOSFET 超过 100A，Infineon ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
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STP80NF55-08
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ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP80NF55-08 晶体管, MOSFET, N沟道, 80 A, 55 V, 8 mohm, 10 V, 3 V
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