Technical parameters/forward voltage: | 800 mV |
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Technical parameters/drain source resistance: | 34.0 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 1.80 W |
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Technical parameters/Leakage source breakdown voltage: | 100 V |
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Technical parameters/breakdown voltage of gate source: | ±20.0 V |
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Technical parameters/Continuous drain current (Ids): | 6.90 A |
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Technical parameters/rise time: | 10.0 ns |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SO |
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Dimensions/Packaging: | SO |
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Compliant with standards/RoHS standards: | Non-Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
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