Technical parameters/frequency: | 900 MHz |
|
Technical parameters/rated current: | 2.1 A |
|
Technical parameters/dissipated power: | 17800 mW |
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Technical parameters/output power: | 38.5 dBm |
|
Technical parameters/gain: | 22 dB |
|
Technical parameters/test current: | 140 mA |
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Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 17800 mW |
|
Technical parameters/rated voltage: | 30 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | SMD-4 |
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Dimensions/Height: | 0.9 mm |
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Dimensions/Packaging: | SMD-4 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Renesas Electronics | 完全替代 |
Trans RF MOSFET N-CH 30V 2.1A 4Pin Case 79A T/R
|
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