BD1356STU In Stock|PDF|Datasheet|Price|Agent[BD1356STU Alternative|Silk Screen|Technology|Solution Development]-ICGOODFIND

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Model BD1356STU

Description NPN Epitaxial Silicon Transistor

Brand: Fairchild

Packaging TO-126-3

Delivery time

Packaging method Rail, Tube

Standard packaging quantity 1

5+:

$ 1.6605

25+:

$ 1.5375

50+:

$ 1.4514

100+:

$ 1.4145

500+:

$ 1.3899

2500+:

$ 1.3592

5000+:

$ 1.3469

10000+:

$ 1.3284

Price	$ 1.6605	$ 1.5375	$ 1.4514	$ 1.4145	$ 1.3899
Start batch production	5+	25+	50+	100+	500+

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Technical parameters/rated voltage (DC):	45.0 V
Technical parameters/rated current:	1.50 A
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	1.25 W
Technical parameters/breakdown voltage (collector emitter):	45 V
Technical parameters/Maximum allowable collector current:	1.5A
Technical parameters/minimum current amplification factor (hFE):	40 @150mA, 2V
Technical parameters/maximum current amplification factor (hFE):	250
Technical parameters/rated power (Max):	1.25 W
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	1.25 W
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-126-3
Dimensions/Length:	8 mm
Dimensions/Width:	3.25 mm
Dimensions/Height:	1.5 mm
Dimensions/Packaging:	TO-126-3
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Rail, Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Customs information/ECCN code:	EAR99