Technical parameters/power supply voltage (DC): | 30.0 V |
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Technical parameters/power supply current: | 8 mA |
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Technical parameters/number of circuits: | 2 |
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Technical parameters/number of channels: | 2 |
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Technical parameters/input compensation drift: | 0.00 V/K |
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Technical parameters/bandwidth: | 10.0 MHz |
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Technical parameters/conversion rate: | 9.00 V/μs |
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Technical parameters/gain bandwidth product: | 10 MHz |
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Technical parameters/input compensation voltage: | 500 µV |
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Technical parameters/input bias current: | 200 nA |
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Technical parameters/operating temperature (Max): | 70 ℃ |
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Technical parameters/operating temperature (Min): | 0 ℃ |
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Technical parameters/Common Mode Rejection Ratio (Min): | 70 dB |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | 0℃ ~ 70℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NE5532DR
|
TI | 类似代替 | SOIC-8 |
Texas Instruments
|
||
|
|
U | 类似代替 | PDIP |
Texas Instruments
|
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