Technical parameters/power supply current: | 1.1 mA |
|
Technical parameters/number of circuits: | 1 |
|
Technical parameters/number of channels: | 1 |
|
Technical parameters/dissipated power: | 500 mW |
|
Technical parameters/Common Mode Rejection Ratio: | 85 dB |
|
Technical parameters/gain bandwidth product: | 600 kHz |
|
Technical parameters/input compensation voltage: | 400 µV |
|
Technical parameters/input bias current: | 40 nA |
|
Technical parameters/operating temperature (Max): | 70 ℃ |
|
Technical parameters/operating temperature (Min): | 0 ℃ |
|
Technical parameters/dissipated power (Max): | 500 mW |
|
Technical parameters/Common Mode Rejection Ratio (Min): | 85 dB |
|
Technical parameters/power supply voltage (Max): | 15 V |
|
Technical parameters/power supply voltage (Min): | 1.8 V |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | PDIP-8 |
|
Dimensions/Length: | 9.27 mm |
|
Dimensions/Width: | 6.35 mm |
|
Dimensions/Height: | 5.33 mm |
|
Dimensions/Packaging: | PDIP-8 |
|
Physical parameters/operating temperature: | 0℃ ~ 70℃ |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NE5230DR2G
|
ON Semiconductor | 完全替代 | SOIC-8 |
NE5230,SE5230,SA5230,NCV5230,低电压运算放大器,ON Semiconductor 电源电压范围 1.8 V 至 15 V 可调电源电流 低噪声 SA 等级:-40°C 至 +85°C SE 等级:-40°C 至 +125°C NCV5230 适用于汽车应用;符合 AEC-Q100 ### 运算放大器,ON Semiconductor
|
||
NE5230N
|
ON Semiconductor | 完全替代 | PDIP-8 |
低电压运算放大器 Low Voltage Operational Amplifier
|
||
|
|
Philips | 完全替代 | DIP |
低电压运算放大器 Low Voltage Operational Amplifier
|
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