Technical parameters/dissipated power: | 165 mW |
|
Technical parameters/Leakage source breakdown voltage: | 4.00 V |
|
Technical parameters/Continuous drain current (Ids): | 10.0 mA |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | SO-1 |
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Dimensions/Packaging: | SO-1 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Renesas Electronics | 功能相似 |
HJ-FET 13dB S01
|
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NE4210S01
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NEC | 功能相似 | SO-1 |
HJ-FET 13dB S01
|
||
|
|
California Eastern Laboratories | 功能相似 | 4 |
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
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