Technical parameters/rated voltage (DC): | 12.0 V |
|
Technical parameters/rated current: | 50.0 mA |
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Technical parameters/number of pins: | 3 |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 200 mW |
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Technical parameters/collector breakdown voltage: | 30.0 V |
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Technical parameters/breakdown voltage (collector emitter): | 12.0 V |
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Technical parameters/Maximum allowable collector current: | 0.025A |
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Technical parameters/DC current gain (hFE): | 75 |
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Technical parameters/operating temperature (Max): | 100 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 200 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-92 |
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Dimensions/Height: | 5.33 mm |
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Dimensions/Packaging: | TO-92 |
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Physical parameters/materials: | Silicon |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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Customs information/HTS code: | 85412100959 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTE108
|
NTE Electronics | 类似代替 | TO-92 |
NTE ELECTRONICS NTE108 射频晶体管, NPN, 15V, 600MHZ, TO-92
|
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