Technical parameters/RAM size: | 9420.8 b |
|
Technical parameters/operating temperature (Max): | 100 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/power supply voltage: | 1.14V ~ 1.26V |
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Technical parameters/power supply voltage (Max): | 1.26 V |
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Technical parameters/power supply voltage (Min): | 1.14 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 256 |
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Encapsulation parameters/Encapsulation: | FTBGA-256 |
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Dimensions/Length: | 17 mm |
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Dimensions/Width: | 17 mm |
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Dimensions/Height: | 1.25 mm |
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Dimensions/Packaging: | FTBGA-256 |
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Physical parameters/operating temperature: | -40℃ ~ 100℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tray |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | 3A991.d |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LCMXO1200E-3BN256I
|
Lattice Semiconductor | 完全替代 | LFBGA-256 |
FPGA - 现场可编程门阵列 1200 LUTs 211 I/O 1.2V -3 SPD
|
||
LCMXO1200E-3FTN256C
|
Lattice Semiconductor | 类似代替 | FTBGA-256 |
LATTICE SEMICONDUCTOR LCMXO1200E-3FTN256C CPLD, FLASH, 600, 211 I/O"s, BGA, 256Pins, 500MHz
|
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