Technical parameters/number of channels: | 1 |
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Technical parameters/number of pins: | 7 |
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Technical parameters/drain source resistance: | 0.0018 Ω |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 150 W |
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Technical parameters/threshold voltage: | 1.7 V |
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Technical parameters/drain source voltage (Vds): | 40 V |
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Technical parameters/Continuous drain current (Ids): | 180A |
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Technical parameters/rise time: | 28 ns |
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Technical parameters/Input capacitance (Ciss): | 18700pF @25V(Vds) |
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Technical parameters/descent time: | 119 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 150W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 7 |
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Encapsulation parameters/Encapsulation: | TO-263-7 |
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Dimensions/Length: | 10 mm |
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Dimensions/Width: | 9.25 mm |
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Dimensions/Height: | 4.4 mm |
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Dimensions/Packaging: | TO-263-7 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Power Management, Power management, High-Side MOSFETs fo, Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump, Power Management, |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with standard/REACH SVHC version: | <
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