Technical parameters/polarity: | N-CH |
|
Technical parameters/drain source voltage (Vds): | 60 V |
|
Technical parameters/Continuous drain current (Ids): | 7A |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOP |
|
Dimensions/Packaging: | SOP |
|
Other/Product Lifecycle: | Active |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HAT2033RJ
|
HITACHI | 功能相似 | SOT |
硅N沟道功率MOS FET高速电源开关 Silicon N Channel Power MOS FET High Speed Power Switching
|
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