Technical parameters/polarity: | NPN |
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Technical parameters/breakdown voltage (collector emitter): | 120 V |
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Technical parameters/Maximum allowable collector current: | 0.1A |
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Encapsulation parameters/Encapsulation: | S-Mini |
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Dimensions/Packaging: | S-Mini |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSS64LT1
|
Leshan Radio | 功能相似 |
驱动晶体管 Driver Transistor
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BSS64LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BSS64LT1G Bipolar (BJT) Single Transistor, NPN, 80 V, 60 MHz, 225 mW, 100 mA, 20 hFE 新
|
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