Technical parameters/voltage regulation value: | 8.2 V |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 500 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | SOD-80 |
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Dimensions/Height: | 3.7 mm |
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Dimensions/Packaging: | SOD-80 |
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Physical parameters/temperature coefficient: | 4.6 mV/℃ |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZV55-B8V2
|
Nexperia | 类似代替 | SOD-80 |
500mW,BZV55 系列,NXP Semiconductors NXP 500mW 表面安装 (SMT) 齐纳二极管,具有较宽的击穿电压范围。 ### 齐纳二极管,NXP Semiconductors
|
||
|
|
Philips | 类似代替 | Mini-MELF |
500mW,BZV55 系列,NXP Semiconductors NXP 500mW 表面安装 (SMT) 齐纳二极管,具有较宽的击穿电压范围。 ### 齐纳二极管,NXP Semiconductors
|
||
|
|
Philips | 类似代替 | Mini-MELF |
500mW,BZV55 系列,NXP Semiconductors NXP 500mW 表面安装 (SMT) 齐纳二极管,具有较宽的击穿电压范围。 ### 齐纳二极管,NXP Semiconductors
|
||
BZV55-B8V2,115
|
NXP | 类似代替 | SOD-80 |
NXP BZV55-B8V2,115 单管二极管 齐纳, 8.2 V, 500 mW, SOD-80C, 2 %, 2 引脚, 200 °C
|
||
BZV55C8V2
|
DC Components | 功能相似 |
Diode Zener Single 8.2V 5% 0.5W(1/2W) 2Pin Mini-MELF
|
|||
BZV55C8V2
|
Central Semiconductor | 功能相似 |
Diode Zener Single 8.2V 5% 0.5W(1/2W) 2Pin Mini-MELF
|
|||
|
|
Sensitron Semiconductor | 功能相似 | MELF |
Diode Zener Single 8.2V 5% 0.5W(1/2W) 2Pin Mini-MELF
|
||
BZV55C8V2
|
Vishay Semiconductor | 功能相似 | MELF |
Diode Zener Single 8.2V 5% 0.5W(1/2W) 2Pin Mini-MELF
|
||
BZV55C8V2
|
EIC | 功能相似 | Mini-MELF |
Diode Zener Single 8.2V 5% 0.5W(1/2W) 2Pin Mini-MELF
|
||
BZV55C8V2
|
Multicomp | 功能相似 | SOD-80 |
Diode Zener Single 8.2V 5% 0.5W(1/2W) 2Pin Mini-MELF
|
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