Technical parameters/dissipated power: | 900 mW |
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Technical parameters/dissipated power (Max): | 900 mW |
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Physical parameters/operating temperature: | -55℃ ~ 125℃ |
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Other/Typical Dual Supply Voltage: | ±15 V |
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Other/Number of Channels per Chip: | 2 |
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Other/Configuration: | Dual 4:1 |
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Other/Operating Temperature: | -55 to 125 °C |
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Other/Number of outputs per Chip: | 2 |
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Other/Maximum High Level Output Current: | 30 mA |
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Other/Maximum Turn On Time: | 150@±15V ns |
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Other/Maximum Dual Supply Voltage: | ±20 V |
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Other/Typical Supply Current: | 0.2@15V mA |
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Other/Maximum Supply Current: | 0.5@±15V mA |
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Other/Input Signal Types: | Differential |
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Other/Counting: | Through Hole |
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Other/Output Signal Types: | Single |
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Other/Typical Single Supply Voltage: | 12|15|18|24|28 V |
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Other/Creating Levels: | Military |
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Other/Chip Enable Signals: | Yes |
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Other/Maximum On Resistance: | 100@±10V Ohm |
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Other/Maximum Power Dissection: | 900 mW |
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Other/Minimum Dual Supply Voltage: | ±5 V |
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Other/Maximum Single Supply Voltage: | 44 V |
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