Technical parameters/frequency: 30 MHz
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 130 W
Technical parameters/gain bandwidth product: 30 MHz
Technical parameters/breakdown voltage (collector emitter): 230 V
Technical parameters/maximum allowable collector current: 15A
Technical parameters/minimum current amplification factor (hFE): 80 @1A, 5V
Technical parameters/rated power (Max): 150 W
Technical parameters/DC current gain (hFE): 80
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 130 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/length: 15.8 mm
External dimensions/width: 5 mm
External dimensions/height: 18.7 mm
External dimensions/packaging: TO-3-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Audio, Audio
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SC5200N(S1,E,S)
|
Toshiba | 功能相似 | TO-3-3 |
NPN 功率晶体管，Toshiba ### 双极晶体管，Toshiba
|
||
2SC5242OTU
|
ON Semiconductor | 功能相似 | TO-3-3 |
NPN外延硅晶体管 NPN Epitaxial Silicon Transistor
|
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