Technical parameters/power supply voltage (DC): 4.50V (min)
Technical parameters/rise/fall time: 23ns, 25ns
Technical parameters/number of output interfaces: 2
Technical parameters/power supply current: 2.50 mA
Technical parameters/dissipated power: 470 mW
Technical parameters/rise time: 35 ns
Technical parameters/descent time: 35 ns
Technical parameters/descent time (Max): 35 ns
Technical parameters/rise time (Max): 35 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): 40 ℃
Technical parameters/dissipated power (Max): 470 mW
Technical parameters/power supply voltage: 4.5V ~ 18V
Technical parameters/power supply voltage (Max): 18 V
Technical parameters/power supply voltage (Min): 4.5 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 16
Encapsulation parameters/Encapsulation: SOIC-16
External dimensions/packaging: SOIC-16
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TC4425COE
|
Microchip | 类似代替 | SOIC-16 |
3A双高速功率MOSFET驱动器 3A Dual High-Speed Power MOSFET Drivers
|
||
TC4425COE713
|
Microchip | 类似代替 | SOIC-16 |
3A双高速功率MOSFET驱动器 3A Dual High-Speed Power MOSFET Drivers
|
||
TC4425EOE
|
Microchip | 类似代替 | SOIC-16 |
3A双高速功率MOSFET驱动器 3A Dual High-Speed Power MOSFET Drivers
|
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