Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: ±200 V
Technical parameters/Continuous drain current (Ids): 2.00 A
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 110pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TC2320TG-G
|
Suptertex | 类似代替 |
SOIC N+P 200V
|
|||
TC2320TG-G
|
Microchip | 类似代替 | SOIC-8 |
SOIC N+P 200V
|
||
TC2320TG-G
|
Supertex | 类似代替 | SOIC-8 |
SOIC N+P 200V
|
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