Technical parameters/power supply voltage (DC): 4.50V (min)
Technical parameters/rise/fall time: 18 ns
Technical parameters/number of output interfaces: 1
Technical parameters/power supply current: 1.00 mA
Technical parameters/dissipated power: 470 mW
Technical parameters/rise time: 26 ns
Technical parameters/descent time: 26 ns
Technical parameters/descent time (Max): 26 ns
Technical parameters/rise time (Max): 26 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 470 mW
Technical parameters/power supply voltage: 4.5V ~ 16V
Technical parameters/power supply voltage (Max): 16 V
Technical parameters/power supply voltage (Min): 4.5 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 3.99 mm
External dimensions/height: 1.55 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TC1412NEOA
|
Microchip | 完全替代 | SOIC-8 |
MICROCHIP TC1412NEOA 驱动器芯片, MOSFET, 低压侧, 4.5V-16V电源, 2A输出, 35ns延迟, SOIC-8
|
||
TC1412NEOA
|
TelCom | 完全替代 |
MICROCHIP TC1412NEOA 驱动器芯片, MOSFET, 低压侧, 4.5V-16V电源, 2A输出, 35ns延迟, SOIC-8
|
|||
TC1412NEOA713
|
Microchip | 完全替代 | SOIC-8 |
TC1412N系列 2A 16V最高电压 单通道 低边 非反相 MOSFET驱动器-SOIC-8
|
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