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Model STB55NE06
Description N - Channel enhanced 'single feature size' POWER MOSFET N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET
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Brand: ST Microelectronics
Packaging TO-263
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5505) Minimum order quantity(1)
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Technical parameters/drain source resistance: 22.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 130 W

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/leakage source breakdown voltage: 60.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 55.0 A

Technical parameters/rise time: 120 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -60 ℃

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-263

External dimensions/packaging: TO-263

Other/Product Lifecycle: Unknown

Compliant with standards/RoHS standards: Non-Compliant

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Model Brand Similarity Encapsulation Introduction Data manual
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50A ， 60V ， 0.022 Ohm的N通道功率MOSFET 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs

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