Technical parameters/rated voltage (DC): 150 V
Technical parameters/rated current: 37.0 A
Technical parameters/drain source resistance: 50.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 178 W
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 3.20 nF
Technical parameters/gate charge: 100 nC
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/leakage source breakdown voltage: 150 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 37.0 A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: D2PAK-3
External dimensions/packaging: D2PAK-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Other/Minimum Packaging: 800
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTB35N15T4G
|
ON Semiconductor | 功能相似 | TO-263-3 |
N 通道功率 MOSFET,100V 至 1700V,ON Semiconductor ### MOSFET 晶体管,ON Semiconductor
|
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